Optimal channel dimensions and temperature characteristics of SI-FinFET transistor
As metal oxide semiconductor field effect transistor (MOSFET) technology approaches its downscaling limits, many novel structures of FET have been explored extensively. One of the relatively new types of FET is FinFET. The performance of electronic devices, which may correspond to a wide array of re...
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| Format: | Thèse |
| Langue: | anglais |
| Publié: |
2019
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| Accès en ligne: | http://umpir.ump.edu.my/id/eprint/31094/1/Optimal%20channel%20dimensions%20and%20temperature%20characteristics.pdf |