(3C-SiC) silicon carbide mems capacitive pressure sensor for high temperature applications

This research focuses on the development of (3C-SiC) silicon carbide MEMS capacitive pressure sensor for high temperature applications. A packaged MEMS capacitive pressure sensor materials that operates at pressure up to 5.0 MPa and temperature up to 500 °C is developed. The diaphragm employs a sing...

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Bibliographic Details

Main Author:	Noraini Marsi (P63136)
Other Authors:	Burhanuddin Yeop Majlis, Prof. Dato' Dr.
Format:	theses
Language:	English
Published:	UKM, Bangi 2023
Subjects:	Silicon carbide Pressure sensor Thin film Silicon substrate
Online Access:	https://ptsldigital.ukm.myjspui/handle/123456789/519557
Abstract	Abstract here