Al-Ta2O5-GaN Semiconductor Device Structure
GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...
| 第一著者: | |
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2014
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/28959/ |