Al-Ta2O5-GaN Semiconductor Device Structure
GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...
| 第一著者: | |
|---|---|
| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2014
|
| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/28959/ |
| 要約: | GaN-based semiconductor devices have been extensively investigated for used in high
power and high temperature device applications in order to replace Si which is no longer capable
to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide
charge density, and high oxide capacitance would be necessary for device-quality GaN-based
MOS devices.
Peranti semikonduktor berasaskan GaN telah dikaji secara menyeluruh bagi penggunaan
dalam kuasa dan suhu tinggi bagi menggantikan Si yang tidak dapat lagi memenuhi keperluan
tersebut. Sifat seperti kebocoran arus yang rendah, ketumpatan cas oksida yang rendah, dan
kapasitan yang tinggi amat diperlukan untuk peranti MOS berasaskan GaN berkualiti tinggi. |
|---|