Al-Ta2O5-GaN Semiconductor Device Structure

GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...

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Bibliographic Details
Main Author:	Yeoh, Lai Seng
Format:	Thesis
Language:	English
Published:	2014
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/28959/
Abstract	Abstract here

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