Al-Ta2O5-GaN Semiconductor Device Structure

GaN-based semiconductor devices have been extensively investigated for used in high power and high temperature device applications in order to replace Si which is no longer capable to fulfill these ever-increasing demands. The characteristics of low leakage current, low oxide charge density, and...

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Détails bibliographiques
Auteur principal:	Yeoh, Lai Seng
Format:	Thèse
Langue:	anglais
Publié:	2014
Sujets:	QC1 Physics (General)
Accès en ligne:	http://eprints.usm.my/28959/

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