Quantum Device: Empirical Modelling Of The Resonant Tunneling Diode

The transistor was widely employed in integrated circuit design. Nevertheless, the continued scaling the transistor size will affect the device performances. RTD is an efficient high-speed device and has high-frequency operation up to Terahertz (THz) compared to the transistor. It has the potential...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Ahmad, Anis Syarliza
التنسيق:	أطروحة
اللغة:	الإنجليزية
منشور في:	2016
الموضوعات:	TK7800-8360 Electronics
الوصول للمادة أونلاين:	http://eprints.usm.my/41322/

مواد مشابهة

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Verification Of Non-Isolated Lcc Resonant Full Bridge Dc-Dc Converter For Solar Photovoltaic Systems
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Design And Experimental Studies Of Multilayer Coatings For Applications In Gallium Nitride Light Emitting Devices [TK7871.89.L53 N247 2006 f rb].
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Compact Modeling Of Deep Submicron CMOS Transistor With Shallow Trench Isolation Mechanical Stress Effect [TK7871.99.M44 T161 2008 f rb].
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