Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
Cerium Oxide (CeO2) thin film has been deposited on silicon (Si) and silicon carbide (SiC) substrates using a radio frequency magnetron sputtering technique. The effect of post deposition annealing at different temperatures (400, 600, 800 and 1000oC) in argon (Ar) ambient for 30 minutes has been inv...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2011
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/43243/ |