Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
Cerium Oxide (CeO2) thin film has been deposited on silicon (Si) and silicon carbide (SiC) substrates using a radio frequency magnetron sputtering technique. The effect of post deposition annealing at different temperatures (400, 600, 800 and 1000oC) in argon (Ar) ambient for 30 minutes has been inv...
| मुख्य लेखक: | Chuah, Soo Kiet |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2011
|
| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.usm.my/43243/ |
समान संसाधन
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[TT267. C518 2004 f rb Kejuruteraan] [Microfiche 7715].
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समान संसाधन
-
Investigation Of Metal-Organic Decomposed (MOD) Cerium Oxide (Ceo2) Gate Deposited On Silicon And Gallium Nitride Substrates Via Spin-On Coating Technique
द्वारा: Quah, Hock Jin
प्रकाशित: (2010) -
Fabrication And Characterization Of Embedded
Gold Nanoparticles In Metal Contacts For
Silicon And Silicon Carbide-Based Devices
द्वारा: Gorji, Mohammad Saleh
प्रकाशित: (2014) -
Investigation Of Metal Organic Deposition Derived
Cerium Oxide Thin Films On Silicon Wafer
द्वारा: Jasni, Farah Anis
प्रकाशित: (2009) -
Investigation of simultaneous thermal oxidation and nitridation of sputtered zirconium on silicon and silicon carbide in nitrous oxide gas environment
द्वारा: Wong, Yew Hoong
प्रकाशित: (2012) -
Optimization Of Potassium Hydroxide (KOH) Etching On The Fabrication Of P-Type Silicon Nanowire Transistor Patterned By Atomic Force Microscopy Lithography
द्वारा: Abdullah, Ahmad Makarimi
प्रकाशित: (2012)