Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors...
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| 格式: | Thesis |
| 語言: | 英语 |
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2014
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| 在線閱讀: | http://eprints.usm.my/46146/ |
| Abstract | Abstract here |