Growth And Physical Characterization Of Native Oxide Thin Film On N-Type Gallium Nitride Substrate By Ti-Iermal Oxidation In Nitrous Oxide Ambient
Thermal oxidation of n-type GaN substrate in nitrous oxide (N20) ambient has been systematically investigated. The thermal oxidation process was performed in a horizontal quartz tube furnace under N20 ambient with now rate of 150 mL/min. The effects of oxidation times (30 - 120 min) and oxidation...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2013
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/61080/ |
| Abstract | Abstract here |