Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...
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| フォーマット: | 学位論文 |
| 言語: | 英語 |
| 出版事項: |
2023
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| 主題: | |
| オンライン･アクセス: | http://eprints.usm.my/61291/ |