Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...

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Détails bibliographiques
Auteur principal:	Samsudin, Muhammad Esmed Alif
Format:	Thèse
Langue:	anglais
Publié:	2023
Sujets:	QC1 Physics (General)
Accès en ligne:	http://eprints.usm.my/61291/

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