Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Samsudin, Muhammad Esmed Alif
التنسيق:	أطروحة
اللغة:	الإنجليزية
منشور في:	2023
الموضوعات:	QC1 Physics (General)
الوصول للمادة أونلاين:	http://eprints.usm.my/61291/

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