Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...

書誌詳細
第一著者:	Samsudin, Muhammad Esmed Alif
フォーマット:	学位論文
言語:	英語
出版事項:	2023
主題:	QC1 Physics (General)
オンライン･アクセス:	http://eprints.usm.my/61291/

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