Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...
| मुख्य लेखक: | |
|---|---|
| स्वरूप: | थीसिस |
| भाषा: | अंग्रेज़ी |
| प्रकाशित: |
2023
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| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.usm.my/61291/ |