Optimization of process parameter variation in double-gate FinFET model using various statistical methods

Double-gate FinFET is identified as a prospect in fulfilling the demands required in replacing the current conventional planar MOSFETs due to several advantages. Specifically in its scalability, reduced leakage current, high drive current, with steep subthreshold swing, subsequently improving the IO...

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Bibliographic Details

Main Author:	Roslan, Ameer Farhan
Format:	Thesis
Language:	English English
Published:	2022
Subjects:	T Technology (General) TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utem.edu.my/id/eprint/26899/ https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=122063
Abstract	Abstract here