Design and analysis of 22 nm DG-MOSFET with high-k metal gate graphene structure for better current performance
One of the innovations with the unique properties of graphene, which is frequently a complementary material of today's advanced materials technology, is the design process for the virtual fabrication of double layer graphene MOSFET 22 nm with high-k metal gate (HKMG). Aggressive scaling of MOSF...
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| Format: | Thesis |
| Language: | English English |
| Published: |
2024
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| Online Access: | http://eprints.utem.edu.my/id/eprint/28370/ https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=124268 |
| Abstract | Abstract here |