Design and analysis of 22 nm DG-MOSFET with high-k metal gate graphene structure for better current performance

One of the innovations with the unique properties of graphene, which is frequently a complementary material of today's advanced materials technology, is the design process for the virtual fabrication of double layer graphene MOSFET 22 nm with high-k metal gate (HKMG). Aggressive scaling of MOSF...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Yahaya, Izwanizam
التنسيق:	أطروحة
اللغة:	الإنجليزية الإنجليزية
منشور في:	2024
الوصول للمادة أونلاين:	http://eprints.utem.edu.my/id/eprint/28370/ https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=124268
Abstract	Abstract here

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