The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition

The growth and characterization of silicon carbide (SiC) quantum dots (QDs) are reported in this work. The SiC QDs were grown using plasma enhanced chemical vapour deposition (PECVD) at 150 MHz radio frequency (RF). A mixture of silane (SiH4) and methane (CH4) with a ratio of 1:4 and diluted in hydr...

書誌詳細
第一著者:	Abd. Karim, Nur Farah Nadia
フォーマット:	学位論文
言語:	英語
出版事項:	2019
主題:	Q Science (General)
オンライン･アクセス:	http://eprints.utm.my/102203/1/NurFarahNadiaMFS2019.pdf

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