Parameter variations of 20NM GAAS junctionless-gate-all-around field-effect transistor with quantum mechanical effects

The scaling down of nanoelectronic device dimension beyond the Moore’s Law era has introduced the use of new material and device architecture of Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). The use of nanomaterial and advanced device architecture allows the mitigation of the short cha...

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Auteur principal:	Mohamad Rasol, Muhammad Faidzal
Format:	Thèse
Langue:	anglais
Publié:	2021
Sujets:	TK Electrical engineering. Electronics Nuclear engineering
Accès en ligne:	http://eprints.utm.my/102679/1/MuhammadFaidzalMohamadRasolMSKE2021.pdf.pdf