A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
The Double-Gate and Gate-all-Around are said to be the promising candidates to pursue Complementary-Metal-Oxide Semiconductor scaling. When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor gate leakage and power consumption. The purpose o...
| मुख्य लेखक: | |
|---|---|
| स्वरूप: | Dissertation |
| भाषा: | अंग्रेज़ी अंग्रेज़ी अंग्रेज़ी |
| प्रकाशित: |
2020
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| विषय: | |
| ऑनलाइन पहुंच: | http://eprints.uthm.edu.my/1051/ |
| Abstract | Abstract here |