A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet

The Double-Gate and Gate-all-Around are said to be the promising candidates to pursue Complementary-Metal-Oxide Semiconductor scaling. When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor gate leakage and power consumption. The purpose o...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Kosmani, Nor Fareza
التنسيق:	Dissertation
اللغة:	الإنجليزية الإنجليزية الإنجليزية
منشور في:	2020
الموضوعات:	TK7800-8360 Electronics
الوصول للمادة أونلاين:	http://eprints.uthm.edu.my/1051/
Abstract	Abstract here

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