Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology
This research presents failure analysis (FA) works on gate oxide defect of Bi�polar CMOS Diffuse (BCD) technology. The latent problem with electrical degradation in the CMOS performance is due to gate oxide defect. The defect was well known affects the CMOS reliability after certain period of ti...
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| Format: | Dissertation |
| Langue: | anglais anglais anglais |
| Publié: |
2013
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| Accès en ligne: | http://eprints.uthm.edu.my/1902/ |
| Abstract | Abstract here |