Technique of failure analysis for gate oxide defect of Bi-polar CMOS Diffuse (BCD) technology

This research presents failure analysis (FA) works on gate oxide defect of Bi�polar CMOS Diffuse (BCD) technology. The latent problem with electrical degradation in the CMOS performance is due to gate oxide defect. The defect was well known affects the CMOS reliability after certain period of ti...

書誌詳細
第一著者:	Abdullah, Farisal
フォーマット:	学位論文
言語:	英語英語英語
出版事項:	2013
主題:	TK Electrical engineering. Electronics Nuclear engineering TK7800-8360 Electronics
オンライン･アクセス:	http://eprints.uthm.edu.my/1902/
Abstract	Abstract here

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