Carrier statistics and ballistic conductance model of bilayer graphene nonoribbon in bgn field effect transistor
Bilayer Graphene Nanoribbons (BGNs) Carrier statistics and Ballistic conductance in the non-degenerate and the degenerate limits are presented. By definition, two dimensional BGN through AB configuration with width less than De- Broglie wave length is a one dimensional (ID) device. Based on the ID b...
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| منشور في: |
2010
|
| الموضوعات: |