Carrier statistics and ballistic conductance model of bilayer graphene nonoribbon in bgn field effect transistor
Bilayer Graphene Nanoribbons (BGNs) Carrier statistics and Ballistic conductance in the non-degenerate and the degenerate limits are presented. By definition, two dimensional BGN through AB configuration with width less than De- Broglie wave length is a one dimensional (ID) device. Based on the ID b...
| 第一著者: | |
|---|---|
| フォーマット: | 学位論文 |
| 出版事項: |
2010
|
| 主題: |