Carrier statistics and ballistic conductance model of bilayer graphene nonoribbon in bgn field effect transistor
Bilayer Graphene Nanoribbons (BGNs) Carrier statistics and Ballistic conductance in the non-degenerate and the degenerate limits are presented. By definition, two dimensional BGN through AB configuration with width less than De- Broglie wave length is a one dimensional (ID) device. Based on the ID b...
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| 格式: | Thesis |
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2010
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