Characterisation of ballistic carbon nanotube field-effect transistor

Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET in dig...

書目詳細資料
主要作者:	Sanudin, Rahmat
格式:	Thesis
語言:	英语
出版:	2005
主題:	TK Electrical engineering. Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/3488/1/RahmatSanudinMFKE2005.pdf

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