Characterisation of ballistic carbon nanotube field-effect transistor

Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET in dig...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखक:	Sanudin, Rahmat
स्वरूप:	थीसिस
भाषा:	अंग्रेज़ी
प्रकाशित:	2005
विषय:	TK Electrical engineering. Electronics Nuclear engineering
ऑनलाइन पहुंच:	http://eprints.utm.my/3488/1/RahmatSanudinMFKE2005.pdf

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