Characterisation of ballistic carbon nanotube field-effect transistor
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the performance of silicon transistor with reduction of its size. However, the scaling process will eventually reaches its limit and by that time a new group of devices are expected to replace MOSFET in dig...
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| Format: | Thèse |
| Langue: | anglais |
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2005
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| Accès en ligne: | http://eprints.utm.my/3488/1/RahmatSanudinMFKE2005.pdf |