Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)

An investigation of the structural properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by plasma enhanced chemical vapour deposition of silane (SiH4) was done using a combination of atomic force microscopy (AFM), photoluminescence, infrared and UV spectroscopy. Films were prepa...

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Détails bibliographiques
Auteur principal:	Anthony Hasbi, Hasbullah
Format:	Thèse
Langue:	anglais
Publié:	2005
Sujets:	QC Physics
Accès en ligne:	http://eprints.utm.my/5093/1/HasbullahAnthonyHasbiMFS2005.pdf

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