Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects
In the recent development of advanced nanoelectronic devices, strain application on silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key factor towards the improvement of device performance. Strainedsilicon is preferred due to less impact of the short chann...
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| اللغة: | الإنجليزية |
| منشور في: |
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.utm.my/99521/1/FatimahKhairiahAbdPSKE2020.pdf.pdf |