Parameter variations of 20NM GAAS junctionless-gate-all-around field-effect transistor with quantum mechanical effects

• Main Author: Muhammad Faidzal Mohamad Rasol
• Other Authors: Zaharah Johari, supervisor
• Format: Master's thesis
• Language: English
• Published: Universiti Teknologi Malaysia 2025
• Subjects: Electrical engineering
• Online Access: https://utmik.utm.my/handle/123456789/42810

Also available in printed version