Gate-all-around floating-gate (GAA-FG) with variable oxide thickness for nonvolatile memory

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Bibliographic Details
Main Author:	Muhammad Faris Bahrudin
Language:	English
Published:	Universiti Teknologi Malaysia 2025
Subjects:	Electrical engineering
Online Access:	https://utmik.utm.my/handle/123456789/54232
Abstract	Abstract here

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