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Modeling and simulation of single and double gates ion sensitive field effect transistor for biomedical applications

The modeling of Ion Sensitive Field Effect Transistor (ISFET) generally starts with its analogy to MOS devices and its threshold dependence on pH. Massobrio et al. proposed a macro-model plug in for SPICE. It was later modified to fit general SPICE based simulators without the need for a plug-in sof...

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主要作者: Dinar, Ahmed Musa
格式: Thesis
语言:英语
英语
出版: 2020
主题:
T Technology (General)
TK Electrical engineering. Electronics Nuclear engineering
在线阅读:http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf
http://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf
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http://eprints.utem.edu.my/id/eprint/25424/1/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf
http://eprints.utem.edu.my/id/eprint/25424/2/Modeling%20And%20Simulation%20Of%20Single%20And%20Double%20Gates%20Ion%20Sensitive%20Field%20Effect%20Transistor%20For%20Biomedical%20Applications.pdf

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