Design of silicon nitride metal-insulator-metal capacitor using 0.15 um gallium arsenide technology

Generally there are two groups of devices in GaAs technology, which are active and passive devices. Passive devices commonly used in GaAs are resistor, capacitor, inductor and transmission lines. This research work only focus on MIM capacitor device. The aim of this research work is to design and de...

書誌詳細
第一著者:	Sanusi, Rasidah
フォーマット:	学位論文
言語:	英語
出版事項:	2010
主題:	Gallium arsenide Silicon nitride Capacitors - Design and construction
オンライン･アクセス:	http://psasir.upm.edu.my/id/eprint/41144/7/FK%202010%2079R.pdf

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