Carrier statistics and ballistic conductance model of bilayer graphene nonoribbon in bgn field effect transistor

Bilayer Graphene Nanoribbons (BGNs) Carrier statistics and Ballistic conductance in the non-degenerate and the degenerate limits are presented. By definition, two dimensional BGN through AB configuration with width less than De- Broglie wave length is a one dimensional (ID) device. Based on the ID b...

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Détails bibliographiques
Auteur principal:	Sadeghi, Hatef
Format:	Thèse
Publié:	2010
Sujets:	Unspecified

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